050-7003 rev c 4-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com g d s power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switching losses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt's patented metal gate structure. ? lower input capacitance ? increased power dissipation ? lower miller capacitance ? easier to drive ? lower gate charge, qg ? to-247 or surface mount d 3 pak package characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 7a) zero gate voltage drain current (v ds = 1000v, v gs = 0v) zero gate voltage drain current (v ds = 800v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms a na volts min typ max 1000 0.780 100 500 100 35 apt10078bll_sll 1000 14 56 30 40 403 3.23 -55 to 150 300 14 30 1300 to-247 d 3 pak apt10078bll apt10078sll 1000v 14a 0.780 ? ? ? ? ? power mos 7 r mosfet
dynamic characteristics 050-7003 rev c 4-2004 apt10078bll_sll source-drain diode ratings and characteristics thermal characteristics symbol r jc r ja min typ max 0.31 40 unit c/w characteristic junction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 13.27mh, r g = 25 ? , peak i l = 14a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s i d - 14a di / dt 700a/s v r 1000 t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and information contained herein. symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energy turn-on switching energy 6 turn-off switching energy min typ max 2525 430 75 95 12 60 9 8 30 9 355 75 740 95 unit pf nc ns j test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 500v i d = 14a @ 25c resistive switching v gs = 15v v dd = 500v i d = 14a @ 25c r g = 1.6 ? inductive switching @ 25c v dd = 667v, v gs = 15v i d = 14a, r g = 3 ? inductive switching @ 125c v dd = 667v, v gs = 15v i d = 14a, r g = 3 ? note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d 14a ) reverse recovery time (i s = -i d 14a , dl s /dt = 100a/s) reverse recovery charge (i s = -i d 14a , dl s /dt = 100a/s) peak diode recovery dv / dt 5 unit amps volts ns c v/ns min typ max 14 56 1.3 692 7.87 10 symbol i s i sm v sd t rr q rr dv / dt
050-7003 rev c 4-2004 typical performance curves apt10078bll_sll r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 5 10 15 20 25 30 0 2 4 6 8 10 0 5 1015202530 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v gs =10v v gs =20v 5.5v 6v 6.5v 7v 5v v gs =15 & 8v v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature 60 50 40 30 20 10 0 14 12 10 8 6 4 2 0 2.5 2.0 1.5 1.0 0.5 0.0 30 25 20 15 10 5 0 1.40 1.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.2 1.1 1.0 0.9 0.8 0.7 0.6 normalized to v gs = 10v @ 0.5 i d = 7a i d = 0.5 i d = 7a v gs = 10v 0.0258 0.107 0.177 0.00295f 0.0114f 0.174f power (watts) junction temp. ( c) rc model case temperature. ( c)
050-7003 rev c 4-2004 apt10078bll_sll v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage 1,000 100 10 1 200 100 10 1 v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 1000 0 10 20 30 40 50 0 20 40 60 80 100 120 140 0.3 0.5 0.7 0.9 1.1 1.3 1.5 56 10 5 1 .1 16 12 8 4 0 c rss c iss c oss t j =+150c t j =+25c v ds =250v v ds =100v v ds =400v i d = 14a t c =+25c t j =+150c single pulse operation here limited by r ds (on) 10ms 1ms 100s i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 667v r g = 3 ? t j = 125c l = 100h t d(on) t d(off) e on e off e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) v dd = 667v r g = 3 ? t j = 125c l = 100h 0 5 10 15 20 25 0 5 10 15 20 25 0 5 10 15 20 25 0 5 10 15 20 25 30 v dd = 667v r g = 3 ? t j = 125c l = 100h e on includes diode reverse recovery. 60 50 40 30 20 10 0 1400 1200 1000 800 600 400 200 0 v dd = 667v i d = 14a t j = 125c l = 100h e on includes diode reverse recovery. 50 40 30 20 10 0 1000 800 600 400 200 0
050-7003 rev c 4-2004 typical performance curves apt10078bll_sll apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved. 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. to - 247 package outline 15.95 (.628) 16.05 (.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) bsc {2 plcs.} 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain) and leads are plated 3.81 (.150) 4.06 (.160) (base of lead) drain (heat sink) 1.98 (.078) 2.08 (.082) gate drain source 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51 (.532) revised 8/29/97 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) revised 4/18/95 d 3 pak package outline figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions i c d.u.t. apt15df100 v ce fi g ure 20 , inductive switchin g test circuit v dd g switching energy drain current drain voltage gate voltage t j 125c 10% 0 t d(off) 90% t f 90% drain current drain voltage gate voltage t j 125c switching energy 10% t d(on) 90% 5% t r 5% 10%
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